Title :
RC-TCIGBT: A Reverse Conducting Trench Clustered
Author :
Kumar, Dinesh ; Sweet, Mark ; Vershinin, Konstantin ; Ngwendson, Luther ; Narayanan, E.M.S.
Author_Institution :
De Montfort Univ., Leicester
Abstract :
A new, three terminal, reverse conducting trench clustered IGBT (RC-TCIGBT) is proposed and evaluated using numerical simulations in 1200 V, non-punch through (NPT) technology. This device is a monolithic integration of an anti- parallel thyristor (APT) in the TCIGBT (O. Spulber, et. al., December 2000), (K. Vershinin, et. al., June 2006). This approach does not increase device area and ensures snap-back free operation in the first (Ist) and third (IIIrd) quadrants. Moreover, it is shown that the RC-TCIGBT which belongs to the class of MOS bipolar devices with controlled thyristor action, can provide excellent Vce (sat)/Eoff trade-off and soft reverse recovery.
Keywords :
MOS digital integrated circuits; bipolar digital integrated circuits; insulated gate bipolar transistors; thyristor circuits; MOS bipolar devices; anti-parallel thyristor; monolithic integration; nonpunch through technology; reverse conducting trench clustered IGBT; snap-back free operation; soft reverse recovery; voltage 1200 V; Anodes; Costs; Insulated gate bipolar transistors; Monolithic integrated circuits; Numerical simulation; Power semiconductor devices; Semiconductor diodes; Switches; Threshold voltage; Thyristors;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294957
