DocumentCode :
3313018
Title :
Electric field pattern improvement by air hole radius variation in a 2-D Photonic Crystal laser (non reviewed)
Author :
Kaatuzian, H. ; Khakmardani, H.H. ; Khorasaninejad, M.
Author_Institution :
Amirkabir Univ. of Technol., Tehran
fYear :
2008
fDate :
3-6 April 2008
Firstpage :
436
Lastpage :
436
Abstract :
In this paper we will focus on photonic crystal lasers which are made by these new structures. Introducing a point defect in the center of a two dimensional slab with triangular lattice of air holes, acts as an optical laser cavity for trapping photons. Several design issues should be noticed in photonic crystal cavities to achieve better lasing action. This is the crucial part of the design which is determined here by desired characteristics for photonic device. Then we have investigated the effect of changing radius of air holes in a triangular lattice of a 2D photonic crystal semiconductor laser on electric field pattern, based on reported observations and experimental measurements. A microdisk structure with central defect has been used in simulations. This structure is formed by a quaternary semiconductor material (InGaAsP) with a refractive index of 3.4.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; microdisc lasers; optical materials; photonic crystals; refractive index; semiconductor lasers; 2D photonic crystal semiconductor laser; InGaAsP; air hole radius variation; electric field pattern improvement; microdisk structure; optical laser cavity; photonic crystal cavities; quaternary semiconductor material; refractive index; trapping photons; Charge carrier processes; Electric variables measurement; Lattices; Optical refraction; Optical variables control; Photonic crystals; Refractive index; Semiconductor lasers; Semiconductor materials; Slabs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Southeastcon, 2008. IEEE
Conference_Location :
Huntsville, AL
Print_ISBN :
978-1-4244-1883-1
Electronic_ISBN :
978-1-4244-1884-8
Type :
conf
DOI :
10.1109/SECON.2008.4494334
Filename :
4494334
Link To Document :
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