Quantum phenomena during electron transport in InAs nanowires

Author

Grützmacher, D. ; Volk, Ch. ; Sladek, K. ; Weis, K. ; Hernandez, S. Estevez ; Hardtdegen, H. ; Demarina, N. ; Schäpers, Th

Author_Institution

Inst. of Semicond. Nanoelectron., Forschungszentrum Julich, Jülich, Germany

Volume

01

fYear

2010

fDate

11-13 Oct. 2010

Firstpage

87

Lastpage

90

Abstract

We investigated the quantum transport in InAs nanowires. From the universal conductance fluctuations at 0.5 K a phase-coherence length of 300 nm was extracted. By averaging the gate-dependent conductance fluctuations a magnetoconductance peak due to weak antilocalization was found indicating the presence of spin-orbit coupling. In a nanowire quantum dot formed by three gate fingers single electron tunneling was confirmed.

Keywords

III-V semiconductors; indium compounds; magnetoresistance; nanowires; semiconductor quantum dots; semiconductor quantum wires; spin-orbit interactions; tunnelling; InAs; electron transport; gate-dependent conductance fluctuations; magnetoconductance; nanowire quantum dot; phase-coherence length; quantum transport; spin-orbit coupling; temperature 0.5 K; three gate fingers single electron tunneling; universal conductance fluctuations; weak antilocalization; Fluctuations; Logic gates; Magnetic confinement; Magnetic resonance imaging; Nanowires; Temperature measurement; Wires; coloumb blockade; semiconductor nanowires; universal conduction fluctuation;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2010 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-5783-0

Type

conf

DOI

10.1109/SMICND.2010.5650262

Filename

5650262