Title :
Kink model for SOI MOSFET
Author :
Kaifi, Mohammad ; Siddiqui, Dr M J
Author_Institution :
SPMIT Allahabad, Allahabad, India
Abstract :
In order to improve the modeling of SOI MOSFET a precise evaluation of the excess current due to impact ionization is needed. This increase in drain current in SOI MOSFET at higher drain voltages is known as Kink effect. In this paper a simple model is proposed for the excess current resulting from impact ionization. Model is based upon estimation of electric field in the saturated part of channel. The electric field in saturated part of channel is obtained by the solution of two dimensional Poisson´s equation. The model is semi-analytical and uses only two fitting parameters which is desirable for circuit simulation. The attractive property of the model is its simplicity. The model has been verified using the experimental results and is found to be quite precise.
Keywords :
MOSFET; Poisson equation; circuit simulation; impact ionisation; semiconductor device models; silicon-on-insulator; 2D Poisson equation; Kink effect; Kink model; SOI MOSFET; Si; circuit simulation; drain current; drain voltages; electric field; excess current; impact ionization; semiconductor device models; silicon-on-insulator; Electric fields; Equations; Impact ionization; Integrated circuit modeling; MOSFET circuits; Mathematical model; Silicon on insulator technology;
Conference_Titel :
Multimedia, Signal Processing and Communication Technologies (IMPACT), 2011 International Conference on
Conference_Location :
Aligarh
Print_ISBN :
978-1-4577-1105-3
DOI :
10.1109/MSPCT.2011.6150478
