Title :
First 15V complementary LDMOS transistors in thin SOI 65nm low power technology
Author :
Bon, O. ; Gonnard, O. ; Gianesello, F. ; Raynaud, C. ; Morancho, F.
Author_Institution :
STMicroelectron,, Crolles
Abstract :
The first complementary LDMOS transistors in thin SOI 65 nm low power technology is presented. The full functionality and integration are demonstrated. Complementary devices are achieved with great electrical parameters. Then a positive breakdown voltage-specific on resistance compromise has been characterized.
Keywords :
MOSFET; low-power electronics; semiconductor device breakdown; silicon-on-insulator; transistors; LDMOS transistors; LDMOSFET; SOI 65 nm low power technology; SOI film; complementary device; electrical parameter; positive breakdown voltage; resistance compromise; voltage 15 V; Conductivity; Electric resistance; Equations; Immune system; Integrated circuit technology; Lithography; Power semiconductor devices; Radio frequency; Substrates; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294969
