• DocumentCode
    3313160
  • Title

    First 15V complementary LDMOS transistors in thin SOI 65nm low power technology

  • Author

    Bon, O. ; Gonnard, O. ; Gianesello, F. ; Raynaud, C. ; Morancho, F.

  • Author_Institution
    STMicroelectron,, Crolles
  • fYear
    2007
  • fDate
    27-31 May 2007
  • Firstpage
    209
  • Lastpage
    212
  • Abstract
    The first complementary LDMOS transistors in thin SOI 65 nm low power technology is presented. The full functionality and integration are demonstrated. Complementary devices are achieved with great electrical parameters. Then a positive breakdown voltage-specific on resistance compromise has been characterized.
  • Keywords
    MOSFET; low-power electronics; semiconductor device breakdown; silicon-on-insulator; transistors; LDMOS transistors; LDMOSFET; SOI 65 nm low power technology; SOI film; complementary device; electrical parameter; positive breakdown voltage; resistance compromise; voltage 15 V; Conductivity; Electric resistance; Equations; Immune system; Integrated circuit technology; Lithography; Power semiconductor devices; Radio frequency; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
  • Conference_Location
    Jeju Island
  • Print_ISBN
    1-4244-1095-9
  • Electronic_ISBN
    1-4244-1096-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2007.4294969
  • Filename
    4294969
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3313160