Title :
A Multiple Deep Trench Isolation Structure with Voltage Divider Biasing
Author :
Desoete, B. ; De Smet, A. ; Moens, P.
Author_Institution :
AMI Semicond., Oudenaarde
Abstract :
We present an isolation structure with multiple rings of deep trenches, which has proven to have an excellent latchup suppression capability. The regions between the trenches are contacted, allowing to increase the blocking voltage of the structure by applying an appropriate bias arrangement. A simple model to predict the optimal bias voltages is derived, and compared to TCAD simulations and measurements.
Keywords :
isolation technology; power integrated circuits; voltage dividers; blocking voltage; latchup suppression capability; multiple deep trench isolation structure; smart power technology; voltage divider biasing; Ambient intelligence; Capacitance; Contacts; Isolation technology; Power semiconductor devices; Predictive models; Semiconductor device modeling; Silicon; Substrates; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294970
