DocumentCode :
3313195
Title :
Nonvolatile logic and memory devices based on spintronics
Author :
Endoh, Tetsuo
Author_Institution :
Center for Innovative Integrated Electron. Syst., Tohoku Univ. Sendai, Sendai, Japan
fYear :
2015
fDate :
24-27 May 2015
Firstpage :
13
Lastpage :
16
Abstract :
New computer memory hierarchy based on spintronics is proposed for low-power electronics that will evolve in two steps from the current volatile system. At first, memories for internal states and pipeline registers and cache memories etc. are made nonvolatile by using spintronics. Then, computers can be made totally nonvolatile by additionally adopting spintronics-based logic-in-memory architecture. Nonvolatile MPU, recognition processor and cache memory that use magnetic tunnel junction (MTJ) have been designed and fabricated to demonstrate their superior features in low static power and high speed data store and restore operations.
Keywords :
cache storage; integrated memory circuits; logic devices; low-power electronics; magnetic storage; magnetic tunnelling; magnetoelectronics; random-access storage; cache memories; cache memory; computer memory; internal states; logic-in-memory architecture; low-power electronics; magnetic tunnel junction; memory devices; nonvolatile MPU; nonvolatile logic devices; pipeline registers; recognition processor; spintronics; Computers; Latches; Memory management; Nonvolatile memory; Random access memory; Switches; STT-MRAM; magnetic tunnel junction; nonvolatile computer; power gating; spintronics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location :
Lisbon
Type :
conf
DOI :
10.1109/ISCAS.2015.7168558
Filename :
7168558
Link To Document :
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