DocumentCode
3313242
Title
Enabling phase-change memory for data-centric computing: Technology, circuitand system
Author
Jing Li
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin Madison, Madison, WI, USA
fYear
2015
fDate
24-27 May 2015
Firstpage
21
Lastpage
24
Abstract
Emerging nonvolatile memory (NVM) technology i.e., phase-change memory (PCM) has been commonly employed as a drop-in replacement for either DRAM or Flash. However, the inherent nature of PCM technology does not align perfectly with either applications in terms of cost-per-bit, performance, power, endurance or retention. The missing killer applications for PCM have slowed down the technology development from becoming mainstream. From the systems perspective, the ever-growing big data problems call for a paradigm shift from traditional compute-centric system to data-centric system for better performance, efficiency and productivity. A data-centric system will demand new hardware features to support the efficient storage and manipulation of data in a wide range of data-intensive applications. Considering these factors, this paper will give an overview of recent research efforts to enable PCM for building a reliable and efficient ternary content addressable memory (TCAM). By leveraging multiple levels of computing stack - technology, circuit and architecture, we will show a holistic approach of tailoring PCM to meeting the new system requirements. It opens up opportunities of accelerating NVM development as the methodology can be generalized to other NVM technologies.
Keywords
Big Data; computer centres; content-addressable storage; memory architecture; phase change memories; Big Data problems; NVM technology; PCM technology; TCAM; computing stack; cost-per-bit factor; data manipulation; data storage; data-centric computing; data-intensive applications; endurance factor; hardware features; nonvolatile memory technology; performance factor; phase-change memory; power factor; retention factor; ternary content addressable memory; Encoding; Hardware; Nonvolatile memory; Phase change materials; Phase change memory; Random access memory; Reliability; Emerging Nonvolatile Memory; PCM; TCAM; Ternary Content Addressable Memory; data-centric system; near-/in-memory computing; phase change memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location
Lisbon
Type
conf
DOI
10.1109/ISCAS.2015.7168560
Filename
7168560
Link To Document