Optimization of d-doped AlInAs/InGaAs HEMT performance using spacer layer and d-doping

In this paper efforts have been made to optimize the performance of delta (δ) doped 0.5 μm gate length InP based In_0.53Ga_0.47As/In_0.52Al_0.48As high electron mobility transistor with the help of some parameters as δ-doping and spacer layer thickness variation. We perform characterization studies on high density two-dimensional electron gas (2DEG), conduction band discontinuity (ΔEC), threshold voltage (V_th), transconductance (g_m), cut-off frequency (f_T), confined in lattice-matched InP based d-doped In_0.53Ga_0.47As/In_0.52Al_0.48As quantum wells HEMT grown by molecular beam epitaxy (MBE) on InP substrate. The impact of parameters (δ doping and spacer layer) variation on the conduction band discontinuity, high density 2DEG and optimization of the performance of HEMT has been analysed. These values then utilize to optimize figure of merit such as transconductance and cut-off frequency of device.