Title :
250V-Class Lateral SOI Devices for Driving HDTV PDPs
Author :
Sumida, H. ; Maiguma, K. ; Shimizu, N. ; Kobayashi, H.
Author_Institution :
Fuji Electr. Device Technol. Co. Ltd., Nagano
Abstract :
This paper introduces our newest 250V-class SOI lateral power devices for HDTV PDP scan driver ICs, which are the 6th-generation SOI devices for us. The lateral IGBT, nch-MOSFET, pch-MOSFET with thick-gate oxide, and diode are included in our 6th-generation SOI device menu. Their characteristics are shown.
Keywords :
driver circuits; high definition television; insulated gate bipolar transistors; plasma displays; power MOSFET; silicon-on-insulator; HDTV PDP; IGBT; SOI lateral power devices; gate oxide; pch-MOSFET; scan driver IC; Acceleration; Dielectric devices; Driver circuits; HDTV; History; Insulated gate bipolar transistors; MOS devices; Power semiconductor devices; Semiconductor diodes; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294974
