Title :
250V Integrable Silicon Lateral Trench Power MOSFETs with Superior Specific On-Resistance
Author :
Varadarajan, K.R. ; Chow, T.P. ; Wang, J. ; Liu, R. ; Gonzalez, F.
Author_Institution :
Rensselaer Polytech. Inst., Troy
Abstract :
A lateral trench power MOSFET in the 250 V class, with a reduced specific on-resistance is proposed. Simulation results of an optimized device structure exhibits a low specific on-resistance of 7 mOmega -cm2, which is 2.5times lower than that of the conventional lateral DMOSFET. Effects of design parameters on the device performance are examined. An improved device structure with reduced sensitivity to process variations is also presented.
Keywords :
electric breakdown; electric resistance; power MOSFET; design parameters; device performance; integrable silicon lateral trench power MOSFET; optimized device structure; specific on-resistance; voltage 250 V; Electric breakdown; Electrodes; Electrons; Epitaxial layers; Fabrication; MOSFETs; Power semiconductor devices; Silicon; Substrates; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294975
