DocumentCode
3313263
Title
250V Integrable Silicon Lateral Trench Power MOSFETs with Superior Specific On-Resistance
Author
Varadarajan, K.R. ; Chow, T.P. ; Wang, J. ; Liu, R. ; Gonzalez, F.
Author_Institution
Rensselaer Polytech. Inst., Troy
fYear
2007
fDate
27-31 May 2007
Firstpage
233
Lastpage
236
Abstract
A lateral trench power MOSFET in the 250 V class, with a reduced specific on-resistance is proposed. Simulation results of an optimized device structure exhibits a low specific on-resistance of 7 mOmega -cm2, which is 2.5times lower than that of the conventional lateral DMOSFET. Effects of design parameters on the device performance are examined. An improved device structure with reduced sensitivity to process variations is also presented.
Keywords
electric breakdown; electric resistance; power MOSFET; design parameters; device performance; integrable silicon lateral trench power MOSFET; optimized device structure; specific on-resistance; voltage 250 V; Electric breakdown; Electrodes; Electrons; Epitaxial layers; Fabrication; MOSFETs; Power semiconductor devices; Silicon; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location
Jeju Island
Print_ISBN
1-4244-1095-9
Electronic_ISBN
1-4244-1096-7
Type
conf
DOI
10.1109/ISPSD.2007.4294975
Filename
4294975
Link To Document