• DocumentCode
    3313263
  • Title

    250V Integrable Silicon Lateral Trench Power MOSFETs with Superior Specific On-Resistance

  • Author

    Varadarajan, K.R. ; Chow, T.P. ; Wang, J. ; Liu, R. ; Gonzalez, F.

  • Author_Institution
    Rensselaer Polytech. Inst., Troy
  • fYear
    2007
  • fDate
    27-31 May 2007
  • Firstpage
    233
  • Lastpage
    236
  • Abstract
    A lateral trench power MOSFET in the 250 V class, with a reduced specific on-resistance is proposed. Simulation results of an optimized device structure exhibits a low specific on-resistance of 7 mOmega -cm2, which is 2.5times lower than that of the conventional lateral DMOSFET. Effects of design parameters on the device performance are examined. An improved device structure with reduced sensitivity to process variations is also presented.
  • Keywords
    electric breakdown; electric resistance; power MOSFET; design parameters; device performance; integrable silicon lateral trench power MOSFET; optimized device structure; specific on-resistance; voltage 250 V; Electric breakdown; Electrodes; Electrons; Epitaxial layers; Fabrication; MOSFETs; Power semiconductor devices; Silicon; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
  • Conference_Location
    Jeju Island
  • Print_ISBN
    1-4244-1095-9
  • Electronic_ISBN
    1-4244-1096-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2007.4294975
  • Filename
    4294975