Title :
Vertical Power Dissipation Characteristics of Semiconductor Power Devices
Author_Institution :
Freescale Semicond. Inc, Tempe
Abstract :
A major challenge in the semiconductor power device technology with continuing shrink in feature sizes and its circuit implementation is power density and heat build-up related problems. This paper discusses a significance of vertical power dissipation characteristics of LDMOS devices with investigating electrical and thermal behaviors under single- and multi-power pulse operations in terms of device substrate dimensions.
Keywords :
power MOSFET; LDMOS devices; circuit implementation; device substrate dimensions; electrical behavior; multipower pulse operations; power density; semiconductor power devices; single-power pulse operations; thermal behavior; vertical power dissipation characteristics; Automotive engineering; Breakdown voltage; Couplings; Displays; Packaging; Power dissipation; Power measurement; Pulse measurements; Substrates; Temperature;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294977
