RESURFed Quasi Lateral IGBT Structure for High Current PICs

In this paper a new power device architecture is proposed. The concept is shown to significantly enhance the current carrying capability of devices suitable for integration in power integrated circuits (PICs). The concept combines the advantages of the RESURF principle under blocking conditions to yield a compact device and uses multiple MOSFET cathode cells, formed on the backside of the wafer to yield a high level of vertical current modulation in the on-state. The new architecture is shown to significantly enhance the forward bias safe operating area and also the forward voltage drop by more than 50%. Critically, it is also shown that the additional backside cathode cells have a minimal effect on the turn-off losses in comparison to a conventional lateral IGBT.