DocumentCode
3313344
Title
Analysis of the MOSFET Failure In a Junction-Isolated Power Integrated Circuit
Author
Jung, Jeesung ; Huang, Alex Q. ; Li, Xuening
Author_Institution
North Carolina State Univ., Raleigh
fYear
2007
fDate
27-31 May 2007
Firstpage
249
Lastpage
252
Abstract
This paper analyzes a possible MOSFET failure mechanism in a Junction-Isolated Power Integrated Circuit during the diode reverse recovery. We have found that this failure is caused by the abruptly increased power density in the center of the isolated device structure.
Keywords
power MOSFET; power integrated circuits; semiconductor diodes; MOSFET failure; diode reverse recovery; isolated device structure; junction-isolated power integrated circuit; power density; Failure analysis; MOSFET circuits; Power MOSFET; Power integrated circuits; Power semiconductor devices; Power system reliability; Semiconductor diodes; Switches; USA Councils; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location
Jeju Island
Print_ISBN
1-4244-1095-9
Electronic_ISBN
1-4244-1096-7
Type
conf
DOI
10.1109/ISPSD.2007.4294979
Filename
4294979
Link To Document