Title :
Modeling and Analysis of Metal Interconnect Resistance of Power IC´s
Author :
Chen, Y. ; Fu, Y. ; Cheng, X. ; Wu, T.X. ; Shen, Z.J.
Author_Institution :
Univ. of Central Florida, Orlando
Abstract :
The influence of metal interconnect resistance becomes increasingly critical as the power IC technology continues to advance. In this paper, we report a multilayer quasi-3D finite element analysis (FEA) approach to model the influence of metal interconnect resistance of power IC´s. We have used this FEA tool to analyze and optimize a large number of metal interconnect designs. Three case studies will be reported in this paper: 1) optimization of single-layer metal interconnect design; 2) analysis of two-layer metal interconnect design, and 3) novel three-layer metal interconnect designs. The modeling results are compared to measured device data for model validation. Reasonable agreement was observed. Design guidelines were generated based on the modeling results.
Keywords :
finite element analysis; integrated circuit design; integrated circuit interconnections; power integrated circuits; FEA; metal interconnect resistance; multi-layer quasi-3D finite element analysis; power IC; single-layer metal interconnect design; three-layer metal interconnect designs; two-layer metal interconnect design; Design optimization; Electric resistance; Fingers; Finite element methods; Integrated circuit modeling; MOSFETs; Power integrated circuits; Power semiconductor devices; SPICE; Silicon;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294980
