DocumentCode
3313397
Title
Monolithic High-Voltage GaN MOSFET/Schottky Pair with Reverse Blocking Capability
Author
Huang, W. ; Chow, T.P.
Author_Institution
Rensselaer Polytech. Inst., Troy
fYear
2007
fDate
27-31 May 2007
Firstpage
265
Lastpage
268
Abstract
We report on a high voltage, reverse blocking GaN MOS-gated transistor switch which integrates a n-channel lateral GaN MOSFET with a Schottky diode. The device, with RESURF lengths up to 18 mum, exhibits good DC characteristics with forward and reverse blocking voltages as high as 770 V and 1050 V respectively.
Keywords
Schottky diodes; gallium compounds; power MOSFET; GaN; GaN - Binary; RESURF; Schottky diode; monolithic high-voltage GaN MOSFET; power MOSFET; reverse blocking capability; size 18 mum; voltage 1050 V; voltage 770 V; Bidirectional control; Gallium nitride; HEMTs; MODFETs; MOSFET circuits; Power MOSFET; Rectifiers; Schottky diodes; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location
Jeju Island
Print_ISBN
1-4244-1095-9
Electronic_ISBN
1-4244-1096-7
Type
conf
DOI
10.1109/ISPSD.2007.4294983
Filename
4294983
Link To Document