Title :
Diamond MISFETs fabricated on high quality polycrystalline CVD diamond
Author :
Hirama, K. ; Takayanagi, H. ; Yamauchi, S. ; Jingu, Y. ; Umezawa, H. ; Kawarada, H.
Author_Institution :
Waseda Uni., Tokyo
Abstract :
Diamond metal-insulator-semiconductor field-effect transistors (MISFETs) with a 0.1 mum gate length were fabricated on high quality IIa-type polycrystalline diamond. A maximum drain current density of 650 mA/mm and a cut-off frequency (fT) of 42 GHz were obtained. The drain current density is the highest value reported to date for diamond FETs.
Keywords :
MISFET; chemical vapour deposition; diamond; polymers; power field effect transistors; diamond MISFET; frequency 42 GHz; high quality lIa-type polycrystalline diamond; high quality polycrystalline CVD diamond; metal-insulator-semiconductor field-effect transistors; Charge carrier processes; Current density; Doping; FETs; Hydrogen; Impurities; MISFETs; MOSFETs; Plasma temperature; Thermal conductivity;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294984
