• DocumentCode
    3313413
  • Title

    Diamond MISFETs fabricated on high quality polycrystalline CVD diamond

  • Author

    Hirama, K. ; Takayanagi, H. ; Yamauchi, S. ; Jingu, Y. ; Umezawa, H. ; Kawarada, H.

  • Author_Institution
    Waseda Uni., Tokyo
  • fYear
    2007
  • fDate
    27-31 May 2007
  • Firstpage
    269
  • Lastpage
    272
  • Abstract
    Diamond metal-insulator-semiconductor field-effect transistors (MISFETs) with a 0.1 mum gate length were fabricated on high quality IIa-type polycrystalline diamond. A maximum drain current density of 650 mA/mm and a cut-off frequency (fT) of 42 GHz were obtained. The drain current density is the highest value reported to date for diamond FETs.
  • Keywords
    MISFET; chemical vapour deposition; diamond; polymers; power field effect transistors; diamond MISFET; frequency 42 GHz; high quality lIa-type polycrystalline diamond; high quality polycrystalline CVD diamond; metal-insulator-semiconductor field-effect transistors; Charge carrier processes; Current density; Doping; FETs; Hydrogen; Impurities; MISFETs; MOSFETs; Plasma temperature; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
  • Conference_Location
    Jeju Island
  • Print_ISBN
    1-4244-1095-9
  • Electronic_ISBN
    1-4244-1096-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2007.4294984
  • Filename
    4294984
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3313413