DocumentCode :
3313426
Title :
180kVA Three Phase SiCGT Inverter Utilizing Novel VF Degradation Reduction Phenomena for SiC Devices
Author :
Sugawara, Y. ; Miyanagi, Y. ; Nakayama, K. ; Asano, K. ; Ogata, S. ; Okada, S. ; Izumi, T. ; Tanaka, A.
Author_Institution :
Kansai Electr. Power Co., Amagasaki
fYear :
2007
fDate :
27-31 May 2007
Firstpage :
273
Lastpage :
276
Abstract :
A novel phenomena of VF degradation reduction, TEDREC phenomena, was found, which can reduce the degradation by increasing SiC device temperature. To realize safe and repeatable operation of degraded SiC devices and to achieve a drastic reduction in their cost, TEDREC method was developed by using the phenomena. A 180 kVA class SiC inverter was also developed by using the method, which is the largest one among the reported SiC inverters.
Keywords :
elemental semiconductors; invertors; silicon; SiC devices; SiC inverters; degradation reduction; three phase SiCGT inverter; Current density; Degradation; Diodes; Fabrication; Inverters; Performance evaluation; Power generation; Silicon carbide; Stress; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
Type :
conf
DOI :
10.1109/ISPSD.2007.4294985
Filename :
4294985
Link To Document :
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