• DocumentCode
    3313426
  • Title

    180kVA Three Phase SiCGT Inverter Utilizing Novel VF Degradation Reduction Phenomena for SiC Devices

  • Author

    Sugawara, Y. ; Miyanagi, Y. ; Nakayama, K. ; Asano, K. ; Ogata, S. ; Okada, S. ; Izumi, T. ; Tanaka, A.

  • Author_Institution
    Kansai Electr. Power Co., Amagasaki
  • fYear
    2007
  • fDate
    27-31 May 2007
  • Firstpage
    273
  • Lastpage
    276
  • Abstract
    A novel phenomena of VF degradation reduction, TEDREC phenomena, was found, which can reduce the degradation by increasing SiC device temperature. To realize safe and repeatable operation of degraded SiC devices and to achieve a drastic reduction in their cost, TEDREC method was developed by using the phenomena. A 180 kVA class SiC inverter was also developed by using the method, which is the largest one among the reported SiC inverters.
  • Keywords
    elemental semiconductors; invertors; silicon; SiC devices; SiC inverters; degradation reduction; three phase SiCGT inverter; Current density; Degradation; Diodes; Fabrication; Inverters; Performance evaluation; Power generation; Silicon carbide; Stress; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
  • Conference_Location
    Jeju Island
  • Print_ISBN
    1-4244-1095-9
  • Electronic_ISBN
    1-4244-1096-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2007.4294985
  • Filename
    4294985