DocumentCode
3313426
Title
180kVA Three Phase SiCGT Inverter Utilizing Novel VF Degradation Reduction Phenomena for SiC Devices
Author
Sugawara, Y. ; Miyanagi, Y. ; Nakayama, K. ; Asano, K. ; Ogata, S. ; Okada, S. ; Izumi, T. ; Tanaka, A.
Author_Institution
Kansai Electr. Power Co., Amagasaki
fYear
2007
fDate
27-31 May 2007
Firstpage
273
Lastpage
276
Abstract
A novel phenomena of VF degradation reduction, TEDREC phenomena, was found, which can reduce the degradation by increasing SiC device temperature. To realize safe and repeatable operation of degraded SiC devices and to achieve a drastic reduction in their cost, TEDREC method was developed by using the phenomena. A 180 kVA class SiC inverter was also developed by using the method, which is the largest one among the reported SiC inverters.
Keywords
elemental semiconductors; invertors; silicon; SiC devices; SiC inverters; degradation reduction; three phase SiCGT inverter; Current density; Degradation; Diodes; Fabrication; Inverters; Performance evaluation; Power generation; Silicon carbide; Stress; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location
Jeju Island
Print_ISBN
1-4244-1095-9
Electronic_ISBN
1-4244-1096-7
Type
conf
DOI
10.1109/ISPSD.2007.4294985
Filename
4294985
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