High temperature behaviour of 3.5 kV 4H-SiC JBS diodes

Author

Brosselard, P. ; Jorda, Xavier ; Vellvehi, Miquel ; Godignon, P. ; Bergman, J.P. ; Lambert, B.

Author_Institution

Campus UAB, Barcelona

fYear

2007

fDate

27-31 May 2007

Firstpage

285

Lastpage

288

Abstract

4H-SiC JBS diodes have been manufactured on a Norstel epitaxied N/N⁺ substrate using a JTE as edge termination. A breakdown voltage higher than 3.5 kV has been measured on 0.16 and 2.56 mm² diodes. The leakage current in the 25degC-300degC temperature range depends on the bipolar/Schottky ratio whereas in forward mode its impact is minor. Diodes have been stressed in DC mode to show that the 2.56 mm² diodes have a slight forward voltage degradation independently of the layout. In switching mode, the recovery charge is only 20 nC for a 4A current switched at 300degC.

Keywords

Schottky diodes; power bipolar transistors; silicon compounds; wide band gap semiconductors; 4H-SiC JBS diodes; JTE; SiC; SiC - Interface; bipolar-Schottky ratio; edge termination; forward voltage degradation; high temperature diode behaviour; temperature 25 degC to 300 degC; voltage 3.5 kV; Anodes; Leakage current; Manufacturing; Power semiconductor switches; Schottky diodes; Semiconductor diodes; Substrates; Temperature distribution; Voltage; Wide band gap semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on

Conference_Location

Jeju Island

Print_ISBN

1-4244-1095-9

Electronic_ISBN

1-4244-1096-7

Type

conf

DOI

10.1109/ISPSD.2007.4294988

Filename

4294988