DocumentCode :
3313480
Title :
Demonstration of motor drive with SiC normally-off IBMOSFET/SBD power converter
Author :
Harada, S. ; Hayashi, Y. ; Takao, K. ; Kinoshita, A. ; Kato, M. ; Okamoto, M. ; Kato, T. ; Nishizawa, S. ; Yatsuo, T. ; Fukuda, K. ; Ohashi, H. ; Arai, K.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki
fYear :
2007
fDate :
27-31 May 2007
Firstpage :
289
Lastpage :
292
Abstract :
Normally-off power MOSFET with low Rons has been developed. IEMOSFET on 4H-SiC carbon-face wafer exhibits an extremely low Rons of 1.8 mOmegacm2 with a blocking voltage of 660 V. The effective channel mobility of this device is 90 cm2/Vs which corresponds to the channel resistance of 0.8 mOmegacm2. A step-down converter was fabricated with the normally-off IEMOSFET and SBD, and the operation of 400 W DC motor drive was successfully observed at room temperature.
Keywords :
DC motor drives; Schottky diodes; carrier mobility; power MOSFET; power convertors; silicon compounds; 4H-SiC; DC motor drive; SBD power converter; Schottky barrier diode; SiC; blocking voltage; carbon-face wafer; channel mobility; channel resistance; normally-off IEMOSFET; normally-off power MOSFET; power 400 W; step-down converter; voltage 660 V; Degradation; Epitaxial growth; Epitaxial layers; Laboratories; MOSFET circuits; Motor drives; Power MOSFET; Silicon carbide; Substrates; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
Type :
conf
DOI :
10.1109/ISPSD.2007.4294989
Filename :
4294989
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3313480
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