GaAs optoelectronic static induction transistor for high frequency pulsed power switching

Fabircation and pulsed switching characteristiccs of a recessed-gate GaAs "Static Induction Transistor" are reported. The theoretical model of the steady-state device characteristics in the forward blocking and forward conduction states is also presented. The SIT is a three-terminal, vertical geometry, unipolar field-effect as well as intrinsic turn-on and turn-off capability. More over the unique device structure and the high absorption coefficient of GaAs at the fundamental absorption band edge (/spl alpha/=10/sup 4/ cm/sup -1/) result in high gain optoelectronic switching, utilizing low energy solid state laser arrays as the triggering source.