Electrical properties of the oxide grown on Si at room temperature using point to plane corona discharge

The electrical properties of SiO₂ grown at 25°C in dry oxygen ambient with a point-to-plane corona discharge are examined. A flat-band voltage of about -2.5 V is obtained from the C-V characteristic curves of the oxides grown with an average corona discharge current density of -30 μA/cm². The flat-band voltage shift is related to the corona discharge current density. The oxides grown by this method with this relatively high current density values are found to have instability due to both ion motion and charge injection in the oxide. The charge transport through this oxide at high positive gate voltage values shows behavior similar to the Frenkel-Pool mechanism