Title :
CCD matched filter in spread spectrum communication
Author :
Nishimori, Eiji ; Kimura, Chikao ; Nakagawa, Atsushi ; Tsubouchi, Kazuo
Author_Institution :
New Japan Radio Co. Ltd., Saitama, Japan
Abstract :
We study the feasibility of a charge coupled device (CCD) matched filter based on AlGaAs/GaAs high electron mobility transistor (HEMT) technology in a spread spectrum (SS) communication system. We show that the CCD matched filter can work in the IF stage including the carrier, and the power consumption is estimated to be approximately 40 mW in case of an 11-chip Barker code at a chip rate of 11 Mcps. This CCD matched filter is suitable for applications where the PN code is short and fixed, for example, in the IEEE 802.11 standard
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; charge-coupled device circuits; digital filters; field effect digital integrated circuits; gallium arsenide; matched filters; pseudonoise codes; spread spectrum communication; AlGaAs-GaAs; AlGaAs/GaAs HEMT; Barker code; CCD matched filter; HEMT technology; IEEE 802.11 standard; IF stage; PN code; carrier; charge coupled device; chip rate; high electron mobility transistor; modulation doped CCD; power consumption; spread spectrum communication; CMOS technology; Capacitance; Charge coupled devices; Energy consumption; Frequency synchronization; Matched filters; Neodymium; Reactive power; Spread spectrum communication; Surface acoustic waves;
Conference_Titel :
Personal, Indoor and Mobile Radio Communications, 1998. The Ninth IEEE International Symposium on
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-4872-9
DOI :
10.1109/PIMRC.1998.733587
