Title :
Quantum capacitance of bilayer graphene
Author :
Kliros, George S.
Author_Institution :
Dept. of Electron. & Commun. Eng., Hellenic Air-Force Acad., Dekeleia, Greece
Abstract :
We present a simple phenomenological model for the quantum capacitance of bilayer graphene. Quantum capacitance is calculated from the broadened density of states taking into account electron-hole puddles and possible finite lifetime of electronic states through a Gaussian broadening distribution. The obtained results are in agreement with many features recently observed in quantum capacitance measurements on gated bilayer graphene. The temperature dependence of quantum capacitance is also investigated.
Keywords :
Gaussian distribution; capacitance; electronic density of states; graphene; C; Gaussian broadening distribution; bilayer graphene; broadened density of states; electron-hole puddles; electronic states; finite lifetime; phenomenological model; quantum capacitance; Atomic layer deposition; Capacitance measurement; Electrostatics; Impurities; Logic gates; Quantum capacitance; Bilayer; Density of States; Energy Broadening; Graphene; Quantum Capacitance;
Conference_Titel :
Semiconductor Conference (CAS), 2010 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-5783-0
DOI :
10.1109/SMICND.2010.5650376
