Quantum capacitance of bilayer graphene

Author

Kliros, George S.

Author_Institution

Dept. of Electron. & Commun. Eng., Hellenic Air-Force Acad., Dekeleia, Greece

Volume

01

fYear

2010

fDate

11-13 Oct. 2010

Firstpage

69

Lastpage

72

Abstract

We present a simple phenomenological model for the quantum capacitance of bilayer graphene. Quantum capacitance is calculated from the broadened density of states taking into account electron-hole puddles and possible finite lifetime of electronic states through a Gaussian broadening distribution. The obtained results are in agreement with many features recently observed in quantum capacitance measurements on gated bilayer graphene. The temperature dependence of quantum capacitance is also investigated.

Keywords

Gaussian distribution; capacitance; electronic density of states; graphene; C; Gaussian broadening distribution; bilayer graphene; broadened density of states; electron-hole puddles; electronic states; finite lifetime; phenomenological model; quantum capacitance; Atomic layer deposition; Capacitance measurement; Electrostatics; Impurities; Logic gates; Quantum capacitance; Bilayer; Density of States; Energy Broadening; Graphene; Quantum Capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2010 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-5783-0

Type

conf

DOI

10.1109/SMICND.2010.5650376

Filename

5650376