New materials for 1.3-/spl mu/m VCSEL smart pixels

Author

Sugou, S. ; Anan, T. ; Nishi, K. ; Yoshikawa, T. ; Saito, H. ; Kasahara, K.

Author_Institution

Opt. Interconnection, NEC Corp., Tsukuba, Japan

fYear

1998

fDate

20-24 July 1998

Abstract

Our approaches to developing 1.3-/spl mu/m VCSELs are introduced. The two new materials, Sb QWs and InGaAs-capped InAs QDs, are found to be candidates for the active layers of VCSELs on GaAs substrates. These new GaAs-based materials will be key in making 1.3-/spl mu/m VCSEL pixels and in enlarging the capacity of optical interconnections.

Keywords

infrared sources; laser transitions; optical interconnections; quantum well lasers; semiconductor quantum dots; smart pixels; substrates; surface emitting lasers; 1.3 mum; 1.3-/spl mu/m VCSEL smart pixel materials; GaAs; GaAs substrates; GaAs-based materials; InGaAs; InGaAs-capped InAs quantum dot lasers; Sb; Sb QW lasers; VCSELs; active layers; optical interconnections capacity; Gallium arsenide; High speed optical techniques; Optical buffering; Optical interconnections; Optical materials; Optical refraction; Optical variables control; Smart pixels; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Broadband Optical Networks and Technologies: An Emerging Reality/Optical MEMS/Smart Pixels/Organic Optics and Optoelectronics. 1998 IEEE/LEOS Summer Topical Meetings

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-4953-9

Type

conf

DOI

10.1109/LEOSST.1998.690389

Filename

690389