Title :
Calculation of MOSFET distortion using the transconductance-to-current ratio (gm/ID)
Author :
Jespers, Paul G. A. ; Murmann, Boris
Author_Institution :
Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
We present analytical expressions for MOSFET distortion as a function of inversion level, represented by gm/ID as a proxy. The expressions are particularly useful for moderate inversion, where the generic textbook equations fail. Unlike previous approaches, the method requires only a small number of technology parameters. For an estimation of gm nonlinearity, only the subthreshold slope is needed. Two additional parameters are required to model gds nonlinearity. The derived expressions are validated based on SPICE simulations using a well-calibrated 65-nm PSP model set.
Keywords :
MOSFET; semiconductor device models; MOSFET distortion; PSP model set; SPICE simulations; gm nonlinearity estimation; generic textbook equations; inversion level; size 65 nm; subthreshold slope; transconductance-to-current ratio; Data models; Distortion; Integrated circuit modeling; MOSFET; Mathematical model; SPICE; Semiconductor device modeling; CMOS integrated circuits; MOSFET modeling; harmonic distortion; nonlinear distortion;
Conference_Titel :
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location :
Lisbon
DOI :
10.1109/ISCAS.2015.7168687
