Title :
Front cover [Extended Abstracts of the Fifth International Workshop on Junction Technology]
Abstract :
Presents the front cover of the Extended Abstracts of the Fifth International Workshop on Junction Technology.
Keywords :
CMOS integrated circuits; MOSFET; Schottky barriers; ion beam effects; ion implantation; laser beam annealing; p-n junctions; photoresists; semiconductor device reliability; semiconductor doping; work function; CMOS; CMOSFET; NMOS-junction integration; PMOS reliability; PMOSFET; Schottky barrier MOSFET; Schottky contact; cluster ion beam doping; electrical properties; flash lamp annealing; ion implantation; ion scattering; laser spike annealing; n-p junction; photoresist pattern; plasma doping; source-drain extension; threshold voltage fluctuation; work function;
Conference_Titel :
Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9902158-6-9
DOI :
10.1109/IWJT.2005.203856
