Title :
Flip-chip bonded MQW modulator operating at ECL voltage levels
Author :
Goossen, K.W. ; Cunningham, J.E. ; Jan, W.Y.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
We have noted that for VCSELs at 850 nm, the only LAN standard wavelength where VCSELs have been shown to operate, have thresholds greater than 1.6 volt, so that if it is desirable to operate circuits at lower absolute voltage levels, VCSELs may not be used. However, we have demonstrated a GaAs MQW electro optical modulator that has a contrast of 2:1 at a differential drive of +/- 1.6 volt.
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; semiconductor lasers; semiconductor quantum wells; surface emitting lasers; 1.6 V; 850 nm; ECL voltage levels; GaAs; GaAs MQW electro optical modulator; LAN standard wavelength; differential drive; flip-chip bonded MQW modulator; lower absolute voltage levels; thresholds; Bonding; Costs; Fiber lasers; Local area networks; Low voltage; Optical arrays; Quantum well devices; Threshold voltage; Transceivers; Vertical cavity surface emitting lasers;
Conference_Titel :
Broadband Optical Networks and Technologies: An Emerging Reality/Optical MEMS/Smart Pixels/Organic Optics and Optoelectronics. 1998 IEEE/LEOS Summer Topical Meetings
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-4953-9
DOI :
10.1109/LEOSST.1998.690393
