Gas flow patterns and thermal uniformity in rapid thermal processing equipment

Author

Campbell, S.A. ; Knutson, K.L. ; Ahn, K.H. ; Leighton, J.D. ; Liu, B.

Author_Institution

Minnesota Univ., Minneapolis, MN, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

921

Lastpage

924

Abstract

Two-dimensional simulation of a rapid thermal processing (RTP) reactor is used to determine the radiative heating and the radiative and convective cooling. The gas flow patterns are found to be a strong function of temperature. Edge losses dominate the wafer thermal nonuniformity at high temperature, while convective cooling dominates at low temperature. A peak in the stress is found under transient conditions. To validate the model, some of the results are compared to experimental data from a small custom RTP system.<>

Keywords

convection; cooling; digital simulation; flow simulation; heat radiation; heat treatment; losses; modelling; semiconductor technology; thermal analysis; 2D simulation; RTP reactor; convective cooling; edge losses; gas flow patterns; high temperature; low temperature; model; radiative cooling; rapid thermal processing equipment; semiconductor processing; stress peak; thermal uniformity; transient conditions; wafer thermal nonuniformity; Cooling; Fluid flow; Heating; Inductors; Rapid thermal processing; Semiconductor device modeling; Temperature; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237012

Filename

237012