• DocumentCode
    3315997
  • Title

    Optimization and design of plasma etching process utilizing a glow discharge model and a transport model simulation

  • Author

    Park, S.-K. ; Economou, D.J.

  • Author_Institution
    Motorola, Inc., Austin, TX, USA
  • fYear
    1990
  • fDate
    9-12 Dec. 1990
  • Firstpage
    913
  • Lastpage
    916
  • Abstract
    A glow discharge model and a neutral transport model were developed to optimize and to design the plasma reactors. Simulation was performed for a parallel-plate single-wafer plasma etching reactor. Using the glow discharge model, the distinct features of electronegative discharge compared to electropositive discharge were revealed. In addition, the effect of pressure, interelectrode spacing, RF/DC voltages, and applied frequency on discharge physics was investigated. The neutral transport model was utilized to study etching rate and uniformity as a function of reactor geometry and operating conditions. Model predictions showed good agreement with experimental results obtained using optical emission spectroscopy. Two novel reactor designs were proposed to improve the reactor performance. These include a graded gas velocity at the reactor inlet and a plasma-impulse mode of operation.<>
  • Keywords
    modelling; simulation; sputter etching; DC voltages; RF voltages; applied frequency; discharge physics; electronegative discharge; electropositive discharge; etching rate; glow discharge model; graded gas velocity; interelectrode spacing; neutral transport model; operating conditions; parallel-plate; plasma etching process; plasma-impulse mode; plasma-reactor design; pressure; reactor geometry; single wafer reactor; transport model simulation; Design optimization; Etching; Glow discharges; Inductors; Physics; Plasma applications; Plasma simulation; Plasma transport processes; Radio frequency; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1990.237014
  • Filename
    237014