Title :
Optimization and design of plasma etching process utilizing a glow discharge model and a transport model simulation
Author :
Park, S.-K. ; Economou, D.J.
Author_Institution :
Motorola, Inc., Austin, TX, USA
Abstract :
A glow discharge model and a neutral transport model were developed to optimize and to design the plasma reactors. Simulation was performed for a parallel-plate single-wafer plasma etching reactor. Using the glow discharge model, the distinct features of electronegative discharge compared to electropositive discharge were revealed. In addition, the effect of pressure, interelectrode spacing, RF/DC voltages, and applied frequency on discharge physics was investigated. The neutral transport model was utilized to study etching rate and uniformity as a function of reactor geometry and operating conditions. Model predictions showed good agreement with experimental results obtained using optical emission spectroscopy. Two novel reactor designs were proposed to improve the reactor performance. These include a graded gas velocity at the reactor inlet and a plasma-impulse mode of operation.<>
Keywords :
modelling; simulation; sputter etching; DC voltages; RF voltages; applied frequency; discharge physics; electronegative discharge; electropositive discharge; etching rate; glow discharge model; graded gas velocity; interelectrode spacing; neutral transport model; operating conditions; parallel-plate; plasma etching process; plasma-impulse mode; plasma-reactor design; pressure; reactor geometry; single wafer reactor; transport model simulation; Design optimization; Etching; Glow discharges; Inductors; Physics; Plasma applications; Plasma simulation; Plasma transport processes; Radio frequency; Voltage;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237014