Properties of ion-implanted strained-Si/SiGe heterostructures

Author

Sugii, Nobuyuki ; Morioka, Jun ; Ishidoya, Yohei ; Koyama, Koji ; Inada, Takashi

Author_Institution

Central Res. Lab., Hitachi Ltd., Kokubunji, Japan

fYear

2005

fDate

7-8 June 2005

Firstpage

11

Lastpage

14

Abstract

In this paper the properties of ion-implanted strained-silicon/SiGe heterostructures are investigated. The strained-silicon layers were completely re-crystallized by rapid-thermal annealing at 900°C or higher. Arsenic diffusivity was identical in strained and unstrained silicon but was higher than both of these in SiGe. Boron diffusivity in SiGe was lower than that in silicon. Electron mobility was greater by about 20-30% in strained silicon than in silicon and lower by about 20-30% in Si_0.7Ge_0.3 than in silicon. Hole mobility was greater by about 30-40% in strained silicon than in silicon and lower by about 5-8% in Si_0.7Ge_0.3 than in silicon. Parasitic resistance in the source/drain region can be decreased if the region consists mostly of strained silicon.

Keywords

Ge-Si alloys; arsenic; boron; carrier density; diffusion; electron mobility; elemental semiconductors; hole mobility; ion implantation; rapid thermal annealing; recrystallisation; semiconductor heterojunctions; semiconductor materials; silicon; 900 C; Si-Si_0.7Ge_0.3:As; Si-Si_0.7Ge_0.3:B; arsenic diffusivity; boron diffusivity; carrier concentration; electron mobility; hole mobility; ion-implanted strained-Si-SiGe heterostructures; parasitic resistance; rapid-thermal annealing; recrystallization; source-drain region; strained-silicon layers; Annealing; Atomic layer deposition; Backscatter; Boron; CMOS technology; Crystallization; Density measurement; Germanium silicon alloys; Random access memory; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on

Print_ISBN

4-9902158-6-9

Type

conf

DOI

10.1109/IWJT.2005.203866

Filename

1598652