Title :
Advantages of B18H22 ion implantation and influence on PMOS reliability
Author :
Ishibashi, M. ; Kawasaki, Y. ; Horita, K. ; Kuroi, T. ; Yamashita, T. ; Shiga, K. ; Hayashi, T. ; Togawa, M. ; Eimori, T. ; Ohji, Y.
Author_Institution :
Process Technol. Dev. Div., Renesas Technol. Corp., Hyogo, Japan
Abstract :
In this paper, the impact of cluster ion (B18Hx+) implantation on SDE formation are investigated in detail. It has been shown that B18Hx+ ion implantation not only can make ultra-shallow junction for 45 nm node and beyond and but also has self-amorphization property and can reduce the channeling tail in the boron distribution without pre-amorphization implantation. In addition, B18Hx+ ion implantation can be expected to reduce a fluctuation of MOSFETs, compared with B+ implantation. Cluster implantation is the reliability issue by hydrogen atom, because a large amount of hydrogen atoms are simultaneously introduced with boron into the silicon substrate. Moreover, neither the increase of junction leakage current nor influences of hydrogen which is introduced during B18Hx+ implantation on PMOS reliability does not occur. The amorphization effect are evaluated by TEM observation and boron and hydrogen profiles by SIMS analysis.
Keywords :
MOSFET; amorphisation; boron compounds; elemental semiconductors; ion implantation; leakage currents; p-n junctions; secondary ion mass spectra; semiconductor device reliability; silicon; transmission electron microscopy; MOSFET; PMOS reliability; SIMS analysis; Si:B18Hx; TEM; boron distribution; cluster ion implantation; hydrogen atom; ion implantation; leakage currents; p-n junctions; self-amorphization property; silicon substrate; ultra-shallow junction; Annealing; Boron; Crystallization; Current measurement; Image restoration; Implants; Ion implantation; Leakage current; MOSFET circuits; Space charge;
Conference_Titel :
Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
Print_ISBN :
4-9902158-6-9
DOI :
10.1109/IWJT.2005.203872
