DocumentCode
3316142
Title
Development of sidebands in ultra high power traveling wave tube amplifiers
Author
Nation, J.A. ; Kerslick, G.S. ; Shiffler, D. ; Schachter, L.
Author_Institution
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
873
Lastpage
876
Abstract
Results are presented from recent research on the development of high-efficiency, high-power traveling-wave-tube amplifiers (TWTAs). A rippled wall TWTA is used as the slow-wave structure for wave interactions with an 850 keV, 1 kA, 100 ns duration electron beam. The output power of the tube is in excess of 400 MW at 8.76 GHz, corresponding to an electron beam to microwave energy conversion efficiency of 48%. At high output power levels (>100 MW), sidebands are observed to develop which carry an increasing fraction of the output signal as the beam current is increased. The sidebands are asymmetrically located with respect to the center frequency of the amplifier and do not appear to be associated with trapped particles. It is postulated that the sidebands result from finite length effects in the short amplifier sections used.<>
Keywords
microwave amplifiers; power amplifiers; travelling-wave-tubes; 1 kA; 100 ns; 400 MW; 48 percent; 8.76 GHz; 850 keV; TWT; X-band; finite length effects; high-efficiency; microwave tubes; rippled wall TWTA; sidebands; slow-wave structure; traveling wave tube amplifiers; ultra high power; wave interactions; Electron beams; Electron tubes; Energy conversion; Frequency; High power amplifiers; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237024
Filename
237024
Link To Document