Title :
Anomalous doping profile in heavily doped Ge
Author :
Hosawa, K. ; Matsumoto, K. ; Shibahara, K.
Author_Institution :
Res. Center for Nanodevices & Syst., Hiroshima Univ., Japan
Abstract :
In this paper, the As and Sb dopant profiles in Ge introduced by ion implantation was evaluated. Profiles for medium dose implantation without amorphizing did not have severe discrepancy between simulated profiles. High dose implantation gave rise to unexpected deep penetration of the dopant. This probably originates from oxidation of the surface amorphized layer.
Keywords :
amorphisation; antimony; arsenic; doping profiles; elemental semiconductors; germanium; heavily doped semiconductors; ion implantation; oxidation; Ge:As; Ge:Sb; doping profile; heavily doped Ge; ion implantation; oxidation; surface amorphized layer; Atomic layer deposition; Doping profiles; Electron devices; Electronic mail; Fabrication; Insulation; Ion implantation; MOSFET circuits; Oxidation; Temperature;
Conference_Titel :
Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
Print_ISBN :
4-9902158-6-9
DOI :
10.1109/IWJT.2005.203875
