Ultra low energy (ULE) implant dose and activation monitoring

Author

Hillard, Robert ; Borland, John ; Benjamin, Mark

Author_Institution

Solid State Meas., Inc., Pittsburgh, PA, USA

fYear

2005

fDate

7-8 June 2005

Firstpage

49

Lastpage

52

Abstract

This paper describes newly developed techniques to accurately measure the 4pp sheet resistance without the influences of probe penetration. Also, the electrically active surface dopant density (NSURF) is measured directly with a single non-penetrating, non-damaging and non-contaminating EM-probe. There are two types of EM-probes available; one for capacitance-voltage (CV) applications and the other for current-voltage (IV) applications. It was found that the EM-probe 4pp could measure source-drain extensions (SDE) structures and p/n ultra-shallow junction (USJ) structures. Conventional 4pp were found to be limited to about 30 to 40 nm and deeper. Variations in dose and sheet resistance reveal valuable information about the ion implantation and annealing processes which seems to be a powerful characterization tool.

Keywords

annealing; doping profiles; ion implantation; p-n junctions; 30 to 40 nm; NSURF; annealing process; capacitance-voltage application; current-voltage application; elastic material-probe; electrically active surface dopant density; four point probe sheet resistance; ion implantation; p-n ultrashallow junction structure; source-drain extensions structure; ultra low energy implant dose; Capacitance-voltage characteristics; Density measurement; Electric resistance; Electric variables measurement; Electrical resistance measurement; Implants; Ion implantation; Monitoring; Probes; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on

Print_ISBN

4-9902158-6-9

Type

conf

DOI

10.1109/IWJT.2005.203877

Filename

1598663