Modeling and parameter extraction of amorphous silicon thin-film-transistors for active-matrix liquid-crystal displays

Author

Troutman, R.R. ; Libsch, F.R.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

855

Lastpage

858

Abstract

An analytical model for the series resistors is derived based on two-dimensional current flow in the source/drain regions. This model accounts for effects of band-tail states on channel conduction, finite overlap of the gate to source and drain, and combined contact resistivity of the intrinsic and n/sup +/ a-Si films. Coupling this model with a consistent model for the intrinsic TFT (thin-film transistor) yields a complete description of the staggered TFT at low drain-to-source voltage, and this model has been used to extract key device parameters for a-Si TFTs.<>

Keywords

amorphous semiconductors; contact resistance; elemental semiconductors; liquid crystal displays; semiconductor device models; silicon; thin film transistors; active-matrix liquid-crystal displays; amorphous Si; analytical model; band-tail states; channel conduction; contact resistivity; gate to drain overlap; gate to source overlap; intrinsic TFT; low drain-to-source voltage; parameter extraction; series resistors; source/drain regions; staggered TFT; thin-film-transistors; two-dimensional current flow; Amorphous silicon; Analytical models; Conductive films; Conductivity; Low voltage; Parameter extraction; Resistors; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237028

Filename

237028