A high-reliability, low-operation-voltage monolithic active-matrix LCD by using advanced solid-phase-growth technique

Author

Nakamura, A. ; Emoto, F. ; Fujii, E. ; Yamamoto, A. ; Uemoto, Y. ; Hayashi, H. ; Kato, Y. ; Senda, K.

Author_Institution

Matsushita Electron. Corp., Osaka, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

847

Lastpage

850

Abstract

A highly reliable poly-Si thin-film transistor (TFT) integrated driver circuit for a monolithic active-matrix LCD (liquid crystal display) panel has been developed. The lifetime of the present driver circuit has been improved to be much longer than that of the conventional driver circuits as a result of the decrease of the supply voltage from 16 V to 8.2 V. This decrease of operation voltage has been attained by the increase of the field effect mobilities to 130 cm/sup 2//V-s for n-channel TFTs and 70 cm/sup 2//V-s for p-channel TFTs by enlarging the grain size of the poly-Si film to 5 mu m. This enlargement of grain size has been achieved by a solid-phase growth technique using a low-temperature LPCVD (low-pressure chemical vapor deposition) method with Si/sub 2/H/sub 6/ source gas.<>

Keywords

CMOS integrated circuits; driver circuits; elemental semiconductors; liquid crystal displays; recrystallisation; silicon; thin film transistors; 8.2 V; CMOS process; Si; Si/sub 2/H/sub 6/ source gas; field effect mobilities; grain size; high-reliability; low-operation-voltage; low-pressure chemical vapor deposition; low-temperature LPCVD; monolithic active-matrix LCD; n-channel TFTs; operation voltage; p-channel TFTs; polysilicon TFT integrated driver circuit; solid-phase-growth; supply voltage; thin-film transistor; Active matrix liquid crystal displays; Active matrix technology; Chemical vapor deposition; Driver circuits; Grain size; Integrated circuit reliability; Liquid crystal displays; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237030

Filename

237030