Title :
Benefits of heat-assist for laser annealing
Author_Institution :
Res. Center for Nanodevices & Syst., Hiroshima Univ., Japan
Abstract :
In this paper, a new scheme for laser annealing named partial-melt laser annealing (PMLA) is proposed based on the knowledges obtained with heat-assisted laser annealing (HALA) investigation. Its feasibility for 10 nm junction was demonstrated. The obtained sheet resistance indicated sufficient dopant activation by this method.
Keywords :
doping profiles; electrical resistivity; laser beam annealing; HALA; PMLA; dopant activation; heat-assist for laser annealing; junctions; partial-melt laser annealing; sheet resistance; Annealing; Heating; Lamps; MOSFET circuits; Proposals; Solid lasers; Substrates; Surface resistance; Tail; Temperature;
Conference_Titel :
Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
Print_ISBN :
4-9902158-6-9
DOI :
10.1109/IWJT.2005.203880
