Simulation of high-temperature millisecond annealing based on an atomistic modeling of boron diffusion in silicon

Author

Hane, Masami ; Ikezawa, Takeo

Author_Institution

Syst. Devices Res. Labs., NEC Corp., Kanagawa, Japan

fYear

2005

fDate

7-8 June 2005

Firstpage

59

Lastpage

62

Abstract

In this paper, boron ion implantation and subsequent annealing processes in Si were modeled with two kinds of atomistic methods, i.e. molecular dynamics (MD) and Monte Carlo (MC) methods. Through the simulation study, high temperature millisecond annealing is proven to be promising technique, while the simulation results indicate that it still needs pre-/post thermal/amorphization processes being optimized for actual device manufacturing.

Keywords

Monte Carlo methods; amorphisation; annealing; boron; diffusion; elemental semiconductors; ion implantation; molecular dynamics method; silicon; Monte Carlo methods; Si:B; atomistic modeling; boron diffusion; boron ion implantation; high-temperature millisecond annealing; molecular dynamics methods; post thermal amorphization processes; preamorphization processes; Boron; Ion implantation; Kinetic theory; Laboratories; MOSFET circuits; National electric code; Silicon; Simulated annealing; Temperature; Vehicles;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on

Print_ISBN

4-9902158-6-9

Type

conf

DOI

10.1109/IWJT.2005.203881

Filename

1598667