Title :
Deep submicron nitrided-oxide CMOS technology for 3.3-V operation
Author_Institution :
Matsushita Elect. Ind. Co. Ltd., Osaka, Japan
Abstract :
Deep-submicron CMOSFETs with ONO (reoxidized nitrided oxide) gate dielectrics have been demonstrated to satisfy 3.3-V operation, contrary to conventional SiO/sub 2/ FETs. The 1.4- mu m ONO CMOS devices achieve (1) an improved saturation transconductance g/sub m/ of 250 mu S/ mu m for n-FETs together with acceptably small degradation in p-FET g/sub m/, resulting in an excellent CMOS gate delay time of 55 ps/stage (comparable or superior to the device/circuit performance of SiO/sub 2/ FETs) and (2) device lifetimes improved by approximately 100 times to exceed 10 years with respect to both ON- and OFF-state hot-carried reliability for n-FETs as well as TDDB together with unchanged p-FET hot-carrier reliability, all under 3.3-V operation.<>
Keywords :
CMOS integrated circuits; hot carriers; insulated gate field effect transistors; integrated circuit technology; nitridation; oxidation; 1.4 micron; 3.3 V; 55 ps; CMOS gate delay time; CMOSFETs; ONO gate dielectrics; Si-SiO/sub x/N/sub y/; TDDB; deep submicron CMOS technology; hot-carried reliability; saturation transconductance; transconductance degradation; CMOS technology; CMOSFETs; Circuit optimization; Degradation; Delay effects; Dielectrics; FETs; Hot carriers; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237032
