Charging phenomena of the medium dose implantation by a carbonization of the surface layer of the photo-resist

Author

Kamiyanagi, H. ; Shibata, Satoshi

Author_Institution

Matsushita Semicond. Eng. Co., Ltd, Toyama, Japan

fYear

2005

fDate

7-8 June 2005

Firstpage

65

Lastpage

68

Abstract

In this paper, the correlation between the charging phenomena and the photo-resists material after medium dose implantation is reported. To investigate the characteristic change of the photo-resist after ion implantation, the photo-resist removal performance is studied by FT-IR and SEM cross-section image analysis. The result shows that carbonization of photo-resist is promoted by the ion implantation. Both i-line photo-resist and KrF photo-resist were studied. The Si wafer was covered by the 400nm SiO₂ film. The surface potential measurement results of photoresist coating on SiO₂ film for various implantations were investigated. The results suggest that the destruction of the finer device due to charging at medium dose implantation will occur more frequently as the resolution of photo-resist is improved by lowering the bonding energy.

Keywords

Fourier transform spectra; elemental semiconductors; infrared spectra; ion implantation; photoresists; scanning electron microscopy; silicon; silicon compounds; surface charging; surface potential; surface treatment; 400 nm; FTIR spectra; KrF photoresist; SEM; Si; Si wafer; SiO₂ film; SiO₂-Si; bonding energy; carbonization; charging phenomena; i-line photoresist; medium dose ion implantation; surface layer; surface potential measurement; Absorption; Electrostatic measurements; Image analysis; Image converters; Ion implantation; Manufacturing industries; Resists; Scanning electron microscopy; Surface charging; Toy industry;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on

Print_ISBN

4-9902158-6-9

Type

conf

DOI

10.1109/IWJT.2005.203883

Filename

1598669