Title :
Charging phenomena of the medium dose implantation by a carbonization of the surface layer of the photo-resist
Author :
Kamiyanagi, H. ; Shibata, Satoshi
Author_Institution :
Matsushita Semicond. Eng. Co., Ltd, Toyama, Japan
Abstract :
In this paper, the correlation between the charging phenomena and the photo-resists material after medium dose implantation is reported. To investigate the characteristic change of the photo-resist after ion implantation, the photo-resist removal performance is studied by FT-IR and SEM cross-section image analysis. The result shows that carbonization of photo-resist is promoted by the ion implantation. Both i-line photo-resist and KrF photo-resist were studied. The Si wafer was covered by the 400nm SiO2 film. The surface potential measurement results of photoresist coating on SiO2 film for various implantations were investigated. The results suggest that the destruction of the finer device due to charging at medium dose implantation will occur more frequently as the resolution of photo-resist is improved by lowering the bonding energy.
Keywords :
Fourier transform spectra; elemental semiconductors; infrared spectra; ion implantation; photoresists; scanning electron microscopy; silicon; silicon compounds; surface charging; surface potential; surface treatment; 400 nm; FTIR spectra; KrF photoresist; SEM; Si; Si wafer; SiO2 film; SiO2-Si; bonding energy; carbonization; charging phenomena; i-line photoresist; medium dose ion implantation; surface layer; surface potential measurement; Absorption; Electrostatic measurements; Image analysis; Image converters; Ion implantation; Manufacturing industries; Resists; Scanning electron microscopy; Surface charging; Toy industry;
Conference_Titel :
Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
Print_ISBN :
4-9902158-6-9
DOI :
10.1109/IWJT.2005.203883
