0.2 mu m or less i-line lithography by phase-shifting-mask technology

Author

Jinbo, H. ; Yamashita, Y.

Author_Institution

Oki Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

825

Lastpage

828

Abstract

A novel phase-shifting technology has been developed for improving resolution of isolated patterns. A phase-shifter edge line (PEL) is used as an opaque mask instead of a chrome pattern. The intensity distribution of the PEL is sharper than those of chrome patterns under the same illumination conditions. 0.15 mu m wide space patterns in LMR-UV (negative resist) are delineated in the focus range of more than 1.5 mu m by using a PEL-mask and an i-line stepper. In the same manner, 0.15 mu m wide line patterns are clearly formed by use of PFR-TT15 (positive resist). In addition, a new modification adapted to hole or pillar patterns has been developed by applying double exposure with a pair of PEL-masks. By this method 0.2 mu m hole patterns in LMR-UV are successfully delineated in a wide focus latitude of 1.5 mu m.<>

Keywords

VLSI; integrated circuit technology; masks; optical resolving power; photolithography; 0.15 to 0.2 micron; LMR-UV; double exposure; hole patterns; i-line lithography; i-line stepper; intensity distribution; isolated pattern resolution; negative resist; opaque mask; phase-shifter edge line; phase-shifting-mask technology; pillar patterns; wide focus latitude; Isolation technology; Lighting; Lithography; Resists; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237035

Filename

237035