Title :
Transparent phase shifting mask
Author :
Watanabe, H. ; Todokoro, Y. ; Inoue, M.
Author_Institution :
Matsushita Electron. Corp., Kyoto, Japan
Abstract :
A transparent phase shifting mask has been demonstrated to improve the resolution of the conventional i-line stepper and to facilitate the fabrication of various deep submicron patterns for VLSI. This mask, having a single patterned layer of phase shifter, can be easily fabricated, and it is easy to inspect and repair compared to the conventional phase shifting mask with double patterned layers for the Cr layer and the phase shifter layer. The transparent phase shifting mask is promising for fabricating sub-half-micron patterns for 64 M DRAMs.<>
Keywords :
VLSI; integrated circuit technology; masks; photolithography; DRAMs; VLSI; deep submicron patterns; i-line stepper; resolution; single patterned layer; sub-half-micron patterns; transparent phase shifting mask; Chromium; Fabrication; Phase shifters; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237036
