DocumentCode
3316339
Title
Transparent phase shifting mask
Author
Watanabe, H. ; Todokoro, Y. ; Inoue, M.
Author_Institution
Matsushita Electron. Corp., Kyoto, Japan
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
821
Lastpage
824
Abstract
A transparent phase shifting mask has been demonstrated to improve the resolution of the conventional i-line stepper and to facilitate the fabrication of various deep submicron patterns for VLSI. This mask, having a single patterned layer of phase shifter, can be easily fabricated, and it is easy to inspect and repair compared to the conventional phase shifting mask with double patterned layers for the Cr layer and the phase shifter layer. The transparent phase shifting mask is promising for fabricating sub-half-micron patterns for 64 M DRAMs.<>
Keywords
VLSI; integrated circuit technology; masks; photolithography; DRAMs; VLSI; deep submicron patterns; i-line stepper; resolution; single patterned layer; sub-half-micron patterns; transparent phase shifting mask; Chromium; Fabrication; Phase shifters; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237036
Filename
237036
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