Title :
Analysis of conductivity in ultra-shallow p+ layers formed by plasma doping
Author :
Tsutsui, Kazuo ; Majima, Kenta ; Fukagawa, Yotaro ; Sasaki, Yuichiro ; Okashita, Katsumi ; Tamura, Hideki ; Kakushima, Kuniyuki ; Ito, Hiroyuki ; Mizuno, Bunji ; Iwai, Hiroshi
Author_Institution :
Interdisciplinary Graduate Sch. of Sci. & Eng., Tokyo Inst. of Technol., Japan
Abstract :
In this work, the shallow B doped layers formed by plasma doping and activation process using spike-RTA or flash lamp annealing (FLA) were characterized by Hall measurement, and carrier mobility and activation rate in these layers are evaluated in conjunction with doping method and activation process.
Keywords :
Hall effect; boron; carrier mobility; electrical conductivity; elemental semiconductors; incoherent light annealing; plasma materials processing; rapid thermal annealing; semiconductor doping; silicon; Hall measurement; Si:B; activation process; carrier mobility; electrical conductivity; flash lamp annealing; plasma doping; shallow B doped layers; spike-RTA; ultrashallow p+ layers; Annealing; Conductivity; Doping; Helium; Ion implantation; Plasma applications; Plasma immersion ion implantation; Plasma measurements; Plasma properties; Plasma transport processes;
Conference_Titel :
Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
Print_ISBN :
4-9902158-6-9
DOI :
10.1109/IWJT.2005.203887
