Title :
Ni/Co/Ni/TiN structure for highly thermal immune NiSi for CMOSFETs application
Author :
Oh, Soon-Young ; Yun, Jang-Gn ; Kim, Yong-Jin ; Lee, Won-Jae ; Tuya, Agchbayar ; Ji, Hee-Hwan ; Kim, Ui-Sik ; Cha, Han-Seob ; Heo, Sang-Bum ; Lee, Jeong-Gun ; Han, Gil-Jin ; Cho, Yoo Jeong ; Kim, Yeong Cheol ; Wang, Jin-Suk ; Lee, Hi-Deok
Author_Institution :
Dept. of Electron. Eng., Chungnam Nat. Univ., Taejon, South Korea
Abstract :
In this paper, a novel Ni/Co/Ni/TiN structure to improve the thermal stability of NiSi by forming highly thermal stable ternary phase, i.e., (CoxNi1-x)Si2 especially at the top region of NiSi is proposed. The Ni/Co/Ni/TiN structure is very promising for the nanoscale MOSFET technology which needs the ultra shallow junction and high temperature post silicidation processes.
Keywords :
MOSFET; cobalt; cobalt alloys; electric resistance; elemental semiconductors; interface structure; nickel; nickel alloys; semiconductor-metal boundaries; silicon; silicon alloys; thermal stability; titanium compounds; (CoxNi1-x)Si2; CMOSFET; Ni-Co-Ni-TiN; high temperature post silicidation processes; nanoscale MOSFET technology; sheet resistance; silicide-silicon interface; thermal immune NiSi structure; thermal stability; thermal stable ternary phase; ultrashallow junction; Annealing; CMOSFETs; Furnaces; MOSFET circuits; Nickel; Sheet materials; Silicidation; Silicides; Thermal stability; Tin;
Conference_Titel :
Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
Print_ISBN :
4-9902158-6-9
DOI :
10.1109/IWJT.2005.203891
