Theoretical studies of current transport in interband tunnel structures using the effective bond orbital model

Author

Ting, D.Z.-Y. ; Yu, E.T. ; MgGill, T.C.

Author_Institution

Lab. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

779

Lastpage

782

Abstract

A model has been developed that incorporates realistic band structure calculations to describe carrier transport in interband tunnel structures based on the InAs/GaSb/AlSb material system. The light-hole, heavy-hole, and split-off valence bands, and the lowest conduction band, have been incorporated using the effective bond orbital model. The results of the present calculations are compared with those obtained using a two-band model in which only the lowest conduction band and the light-hole valence band have been included. It is found that heavy-hole states can introduce substantial hole-mixing effects in device structures containing GaSb valence-band quantum wells, and could have a significant influence on the current-voltage characteristics of interband devices.<>

Keywords

III-V semiconductors; band structure of crystalline semiconductors and insulators; gallium compounds; indium compounds; semiconductor device models; semiconductor junctions; tunnelling; GaSb-InAs-GaSb; InAs-GaSb-InAs; band structure; carrier transport; conduction band; current transport; current-voltage characteristics; device structures; effective bond orbital model; heavy hole valence bands; hole-mixing effects; interband tunnel structures; light hole valence bands; split-off valence bands; Bonding; Conducting materials; Current-voltage characteristics; Orbital calculations;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237045

Filename

237045