Title :
A new junction technology for low-resistance contacts and Schottky barrier MOSFETs
Author :
Grupp, D.E. ; Connelly, Daniel ; Faulkner, Carl ; Clifton, Paul A.
Author_Institution :
Acorn Technol., Inc., Stanford, CA, USA
Abstract :
By imposing an ultra-thin insulator between low-workfunction metals and silicon, the Schottky barrier of the junction can be substantially reduced, reducing junction resistance. With this approach, low Schottky barrier metal S/D MOSFETs with Mg and Yb as S/D metals are demonstrated.
Keywords :
MOSFET; Schottky barriers; contact resistance; elemental semiconductors; magnesium; silicon; ytterbium; Mg; Schottky barrier MOSFET; Si; Yb; junction resistance; low-resistance contacts; metals; source/drain MOSFETs; ultrathin insulator; workfunction; CMOS technology; Contact resistance; Insulation; MOSFETs; Metal-insulator structures; Photonic band gap; Schottky barriers; Silicides; Silicon on insulator technology; Tunneling;
Conference_Titel :
Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
Print_ISBN :
4-9902158-6-9
DOI :
10.1109/IWJT.2005.203895
