Title :
The numerical simulation of particle trajectories in quantum transport and the effects of scattering and self-consistency on the performance of quantum well devices
Author :
Jensen, K.L. ; Buot, F.A.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
Abstract :
A novel approach for incorporating space- and time-dependent tunneling processes in a full-fledged ensemble particle Monte Carlo simulation of realistic multidimensional heterojunction devices is proposed. It is based on the representation of quantum transport across resonant tunneling devices in terms of particle trajectories which are evaluated using the time-evolution equation of the Wigner distribution function. The effects of scattering and self-consistency of the potential with respect to the charge distribution are included. The accuracy of the approach is demonstrated by comparing the simulation results with experimental data, particularly with respect to the intrinsic bistability and hysteresis in the current-voltage relationships. The resulting behavior and energetics of the Wigner trajectories support the localized particle transport description of a quantum tunneling process and thus may allow the quantum trajectory concept to be applied to the actual particle trajectories of Monte Carlo device simulations.<>
Keywords :
Monte Carlo methods; quantum interference devices; resonant tunnelling devices; semiconductor device models; tunnelling; I-V characteristics; Wigner distribution function; charge distribution; ensemble particle Monte Carlo simulation; hysteresis; intrinsic bistability; localized particle transport; multidimensional heterojunction devices; numerical simulation; particle trajectories; potential scattering; potential self consistency; quantum trajectory concept; quantum transport; quantum well devices; resonant tunneling devices; space dependent tunneling; time-dependent tunneling; time-evolution equation; Distribution functions; Equations; Heterojunctions; Hysteresis; Monte Carlo methods; Multidimensional systems; Numerical simulation; Particle scattering; Resonant tunneling devices;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237047