Self-consistent modeling of bipolar tunnel heterostructures with quantum mechanical current

Author

Bigelow, J.M. ; Leburton, J.P.

Author_Institution

Dept. of Electr. Eng., Illinois Univ., Urbana, IL, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

767

Lastpage

770

Abstract

A model for resonant tunneling between electrons and holes across the homojunction of a BITFET (bipolar tunneling field effect transistor) structure is presented. A transfer-Hamiltonian method is used to calculate the tunneling current between electrons and both heavy and light holes, and is incorporated into a self-consistent Poisson-Schrodinger solver. Results for two material systems, AlGaAs-GaAs and AlInAs-GaInAs, show multiple abrupt NDRs (negative differential resistances) under forward bias. Under reverse bias, the model suggests the possibility of achieving smooth NDRs as a result of the deformation of the confining potential.<>

Keywords

bipolar transistors; field effect transistors; negative resistance; resonant tunnelling devices; semiconductor device models; AlGaAs-GaAs; AlInAs-GaInAs; BITFET; I-V characteristics; abrupt NDRs; ballistic trajectories; bipolar tunnel heterostructures; bipolar tunneling field effect transistor; confining potential deformation; forward bias; model; negative differential resistances; quantum mechanical current; resonant tunneling; reverse bias; self-consistent Poisson-Schrodinger solver; transfer-Hamiltonian method; tunneling current; Charge carrier processes; Deformable models; FETs; Resonant tunneling devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237048

Filename

237048