Title :
Advanced electron mobility model of MOS inversion layer considering 2D-degenerate electron gas physics
Author :
Ishizaka, M. ; Iizuka, T. ; Ohi, S. ; Fukuma, M. ; Mikoshiba, H.
Author_Institution :
NEC Corp., Kawasaki, Japan
Abstract :
A novel mobility model for electrons in the Si-MOS inversion layer is proposed on the basis of two-dimensional degenerate electron gas physics. The mobility is found to be affected by Pauli´s exclusion principle and the Fermi-Dirac distribution function. The universal relation between mobility and effective field strength in the normal direction can be consistently explained by the model, including its temperature dependence.<>
Keywords :
carrier mobility; electron gas; inversion layers; metal-insulator-semiconductor structures; Fermi-Dirac distribution function; MOS inversion layer; Pauli exclusion principle; Si-SiO/sub 2/; effective field strength; electron mobility model; subband energy levels; temperature dependence; two-dimensional degenerate electron gas physics; Distribution functions; Electron mobility; Physics; Temperature dependence;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237049
